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VRRM IFAVM IFRMS IFSM VF0 rF
= = = = = =
400 V 13526 A 21247 A 85000 A 0.758 V 0.021 m
Housingless Welding Diode
5SDD 0135Z0400
PRELIMINARY
Doc. No. 5SYA1179-00 March 07
* * * *
High forward current capability Low forward and reverse recovery losses High current application up to 2000 Hz For parallel connection, please contact factory
Blocking
VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current 400 V 75 mA Half sine waveform, f = 50 Hz Tj = -40...180 C VR = VRRM
Mechanical
FM m DS Da Mounting force Weight Surface creepage distance Air strike distance 35..70 kN 0.14 kg 2 mm 2 mm
Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 0135Z0400
On-state
IFAVM IFRMS IFSM I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current 13526 A 21247 A 91000 A 85000 A Max. surge current integral Tc = Tc = tp = tp = 85 C 85 C Half sine pulse Half sine pulse
8.3 ms VR =0 V 10 ms Half sine pulse 8.3 ms VR =0 V 10 ms Half sine pulse 8000 A 10000 A
34200 kA2s tp = 36100 kA2s tp = 0.920 V 0.970 V IF = IF =
VF max VF0 rF Qrr
Max. on-state voltage Max. Threshold voltage Max. Slope resistance Typ. Recovered charge
0.758 V 0.021 m 600 C IF = 10 000...30 000 A IF = 1 000 A, di/dt = -30 A/s, VR = 100 V
Unless otherwise specified Tj = 180 C
Thermal characteristics
Tj Tstg Rth(j-c) Operating junction temperature range Storage temperature range Thermal resistance junction to case -40...180 C -40...180 C 5.2 K/kW Anode side cooled 15.1 K/kW Cathode side cooled 3.9 K/kW Double side cooled Rth(c-h) Thermal resistance case to heatsink 4.7 K/kW Anode side cooled 5.8 K/kW Cathode side cooled 2.6 K/kW Double side cooled
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 2 of 6
Doc. No. 5SYA1179-00 March 07
5SDD 0135Z0400
Z th ( j - c )(t) =
4 Transient therm al impedance junction to case Zthjc ( K/kW ) 3
2
4
R i (1 - e - t / i )
3 0.2200 4 0.1500 0.0006
i =1
i Ri (K/kW)
1 2.6480
0.8700
2
1
0.0454 0.0255 0.0041 i (s) Conditions: Fm = 35 +5/-0 kN, Double side cooled
Correction for periodic waveforms 180 sine: 0.9 K/kW 120 sine: 1.2 K/kW 60 sine: 2.2 K/kW 180 rectangular: 0.8 K/kW 120 rectangular: 1.2 K/kW 60 rectangular: 2.2 K/kW
0 0,0001
0,001
0,01
0,1
1
Square w ave pulse duration t d ( s )
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 3 of 6
Doc. No. 5SYA1179-00 March 07
5SDD 0135Z0400
On-state characteristics
IF ( A ) 35000 Tj = 180 C 25 C
Surge current characteristics
i 2dt (106 A2s) 200 IFSM ( kA ) 80
30000
70
25000
150 i2dt
60
20000
100
50
15000
40
30
10000
50 I FSM 20
5000
10
0 0 0,5 1 1,5 2 VF (V)
0 1 10 t ( ms ) 0 100
Fig. 3
Forward current vs. forward voltage (max. values).
Fig. 4 Surge forward current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax
Surge current characteristics
IFSM ( kA ) 90 80 70 60
Forward power loss
PT ( W ) 25000
= 60
120 180
20000
DC
15000
50 VR = 0 V
40 30 20 10 V R 0.5 V RRM
10000
5000
0
0 1 10 100 Number n of cycles at 50 Hz
0
4000
8000
12000 16000 I FAV ( A )
Fig. 5
Surge forward current vs. number of pulses, half sine wave, Tj = Tjmax
Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f
Doc. No. 5SYA1179-00 March 07
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 4 of 6
5SDD 0135Z0400
Forward power loss
PT ( W ) 180 270 DC
15000 120 10000 100 140
20000
TC ( C )
25000
= 30
60 90 120
180
160
DC
5000
80
0 0 4000 8000 12000 16000
60 0 4000
= 60
8000
120
12000
180
16000
I FAV ( A )
I FAV ( A )
Fig. 7
Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f
Fig. 8 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f
TC ( C )
180
160
140
120
DC
100
270
80
60 0
= 30
4000
60
8000
90
120
12000
180
16000
I FAV ( A )
Fig. 9
Max. case temperature vs. aver. forward current, square waveform, f = 50 Hz, T = 1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
page 5 of 6
Doc. No. 5SYA1179-00 March 07
5SDD 0135Z0400
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1179-00 March 07

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